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Volumn 162, Issue 1, 1997, Pages 227-238
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Admittance spectroscopy of 6H, 4H, and 15R silicon carbide
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
CAPACITANCE;
COLOR CENTERS;
CRYSTAL LATTICES;
ELECTRIC RESISTANCE;
ENERGY GAP;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SPECTROSCOPY;
VANADIUM;
OPTICAL ADMITTANCE SPECTROSCOPY;
THERMAL ADMITTANCE SPECTROSCOPY;
SILICON CARBIDE;
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EID: 0031188887
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(199707)162:1<227::AID-PSSA227>3.0.CO;2-W Document Type: Article |
Times cited : (10)
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References (25)
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