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Volumn 162, Issue 1, 1997, Pages 227-238

Admittance spectroscopy of 6H, 4H, and 15R silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; COLOR CENTERS; CRYSTAL LATTICES; ELECTRIC RESISTANCE; ENERGY GAP; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPY; VANADIUM;

EID: 0031188887     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<227::AID-PSSA227>3.0.CO;2-W     Document Type: Article
Times cited : (10)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.