Strained Si1-xGex graded channel PMOSFET grown by UHVCVD

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 371-374

  Su, Chia Yi ^a   Wu, San Lein ^b   Jinn Chang, Shoou ^a,c   Chen, Liang Po ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c UNIVERSITY OF TOKYO   (Japan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; THERMOOXIDATION; TRANSCONDUCTANCE;

RAPID THERMAL OXIDATION (RTO); SILICON GERMANIDE; ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION;

MOSFET DEVICES;

EID: 0034226931     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00891-9     Document Type: Article

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