Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells

Journal of Physics Condensed Matter

Volumn 8, Issue 26, 1996, Pages 4751-4766

  Shen, W Z ^a,b   Shen, S C ^a,b   Tang, W G ^a,b   Chang, Y ^a,b   Zhao, Y ^a,b   Li, A Z ^c  

^a CCAST WORLD LABORATORY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EXCITONS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUENCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BAND TO BAND RECOMBINATION; LINE SHAPE ANALYSIS; QUATERNARY STRAINED QUANTUM WELLS; THERMAL CARRIER ACTIVATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030173143     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/26/007     Document Type: Article

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