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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 260-265

CBE growth of 2%-strained InAsP MQWs for 1.5 μm wavelength laser diodes

(5) Sugiura, H a Ogasawara, M a Mitsuhara, M a Itoh, M a Kondo, Y a

a NTT CORPORATION (Japan)

Author keywords

CBE; InAsP; Lasers; Strained MQWs

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; HETEROJUNCTIONS; MOLECULAR STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SHEAR STRESS; STRAIN; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY;

TENSILE STRAIN; WAVELENGTH LASER DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032096626 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00053-0 Document Type: Article

Times cited : (5)

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