Study of Ru etching using O2/Cl2 helicon plasmas

Materials Science and Engineering: B

Volumn 95, Issue 3, 2002, Pages 249-253

  Kim, Hyoun Woo ^a   Han, Jae Hyun ^b   Ju, Byong Sun ^b   Kang, Chang Jin ^b   Moon, Joo Tae ^b  

^a Inha University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Etching; Helicon; Pressure; Ru

Indexed keywords

CURRENT DENSITY; ETCHING; HELICONS; IONS; MASKS; OPTIMIZATION; PLASMA APPLICATIONS; PRESSURE EFFECTS;

HELICON PLASMAS; PATTERNED WAFERS;

RUTHENIUM;

EID: 0036723183     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00272-6     Document Type: Article

References (9)