In situ electrical measurements and manipulation of B/N-doped C nanotubes in a high-resolution transmission electron microscope

Journal of Electron Microscopy

Volumn 52, Issue 2, 2003, Pages 111-117

  Golberg, Dmitri ^a   Mitome, Masanori ^a   Kurashima, Keiji ^a   Bando, Yoshio ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

B N doping; Electrical resistivity; Elemental mapping; Energy filtered transmission electron microscopy; High resolution transmission electron microscopy; Nanotubes

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; MAPPING; MULTIWALLED CARBON NANOTUBES (MWCN); NEEDLES;

B/N DOPING; ELECTRICAL MEASUREMENT; ELECTRICAL RESISTIVITY; ELEMENTAL MAPPING; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; I - V CURVE; N-DOPED; N-DOPING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 0038083145     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/52.2.111     Document Type: Article

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