Stochastic heterostructures and diodium in B/N-doped carbon nanotubes

Physical Review Letters

Volumn 87, Issue 13, 2001, Pages

  Lammert, Paul E ^a   Crespi, Vincent H ^a   Rubio, Angel ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BORON; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; HAMILTONIANS; HETEROJUNCTIONS; NITROGEN; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR QUANTUM DOTS;

DIODIUM; LOCAL DENSITY APPROXIMATION; SELF-CONSISTENT TIGHT-BINDING TECHNIQUE;

CARBON NANOTUBES;

EID: 42749099211     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.136402     Document Type: Article

References (34)

1. C. Zhou, J. Kong, E. Yenilmez, and H. Dai: Science: 290, 1552 (2000).
2. Z. Yao, H. W. Ch. Postma, L. Balents, and C. Dekker: Nature (London): 402, 273 (1999).
3. T. W. Tombler, C. Zhou, J. Kong, and H. Dai: Appl. Phys. Lett.: 76, 2412 (2000);
4. M. S. Fuhrer et al: Science: 288, 494 (2000).
5. O. Stephan et al: Science: 266, 1683 (1994);
6. Z. Weng-Sieh et al: Phys. Rev. B: 51, 11 229 (1995);
7. Ph. Redlich et al: Chem. Phys. Lett.: 260, 465 (1996).
8. M. Terrones et al: Chem. Phys. Lett.: 257, 576 (1996);
9. R. Sen et al: Chem. Phys. Lett.: 287, 671 (1998).
10. J. Yu et al: Appl. Phys. Lett.: 77, 1949 (1998);
11. J. Yu et al: Chem. Phys. Lett.: 323, 529 (2000).
12. W. Han, Y. Bando, K. Kurashima, and T. Sato: Chem. Phys. Lett.: 299, 368 (1999).
13. F. Leonard and J. Tersoff: Phys. Rev. Lett.: 83, 5174 (1999);
14. F. Leonard and J. Tersoff: Phys. Rev. Lett.: 84, 4693 (2000).
15. A. A. Odintsov: Phys. Rev. Lett.: 85, 150 (2000).
16. K. Esfarjani, A. A. Farajian, Y. Hashi, and Y. Kawazoe: Appl. Phys. Lett.: 74, 79 (1999).
17. F. Leonard and J. Tersoff: Phys. Rev. Lett.: 85, 4767 (2000).
18. A. Rubio, J. L. Corkill, and M. L. Cohen: Phys. Rev. B: 49, 5081 (1994);
19. X. Blase et al: Europhys. Lett.: 28, 335 (1994);
20. X. Blase: Phys. Rev. B: 51, 6868 (1995);
21. Y. Miyamoto, A. Rubio, S. G. Louie, and M. L. Cohen: Phys. Rev. B: 50, 18 360 (1994);
22. Y. Miyamoto, A. Rubio, S. G. Louie, and M. L. Cohen: Phys. Rev. B: 50, 4976 (1994).
23. J.-Y. Yi and J. Bernholc: Phys. Rev. B: 47, 1708 (1993).
24. R. Czerw et al, arXiv:cond-mat/0011318.
25. X. Blase, J.-C. Charlier, A. De Vita, and R. Car: Appl. Phys. Lett.: 70, 197 (1997).
26. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
27. E. A. Taft and H. R. Philipp: Phys. Rev.: 138, A197 (1964).
28. C. H. Xu et al: J. Phys. Condens. Matter: 4, 6047 (1992);
29. M. Menon and K. R. Subbaswamy: Phys. Rev. B: 50, 11 577 (1994).
30. D. Porezag, Th. Frauenheim, Th. Köhler, G. Seifert, and R. Kaschner: Phys. Rev. B: 51, 12 947 (1995);
31. J. Widany, Th. Frauenheim, Th. Köhler, M. Sternberg, D. Porezag, G. Jungnickel, and G. Seifert: Phys. Rev. B: 53, 4443 (1996);
32. G. Seifert (private communication).
33. P. E. Lammert, V. H. Crespi, and A. Rubio (unpublished).
34. H. J. Choi, J. Ihm, S. G. Louie, and M. L. Cohen: Phys. Rev. Lett.: 84, 2917 (2000).