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Volumn 216, Issue 1-4 SPEC., 2003, Pages 490-496

Theoretical study on stable structures and diffusion mechanisms of B in SiO 2

Author keywords

Atomic boron; Boron penetration; Diffusion path; Energy barrier; First principle calculations; SiO 2

Indexed keywords

ACTIVATION ENERGY; BORON; CHEMICAL BONDS; DIFFUSION;

EID: 0038007855     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00406-9     Document Type: Conference Paper
Times cited : (4)

References (29)
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    • Perdew J.P., Burke K., Ernzerhof M. Phys. Rev. Lett. 77:1996;3865 Perdew J.P., Burke K., Wang Y. Phys. Rev. B. 54(16):1996;533.
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  • 29
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    • (and references therein, for the experimental barrier for the B diffusion scatters between 2-3 eV)
    • Aoyama T., Tashiro H., Suzuki K. J. Electrochem. Soc. 146:1999;1879. (and references therein, for the experimental barrier for the B diffusion scatters between 2-3 eV).
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    • Aoyama, T.1    Tashiro, H.2    Suzuki, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.