Prevention of degradation of (Ba,Sr)TiO3 during forming gas anneal by a SiO2 capped (Ba,Sr)RuO3 electrode

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 9212-9217

  Kim, Young Bae ^a   Park, Jeong Hee ^a   Hong, Duck Hwa ^a   Choi, Duck Kyun ^a   Yoo, Cha Young ^b   Horii, Hideki ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIFFUSION; ELECTRODES; MAGNETRON SPUTTERING; PHASE SEPARATION; REDUCTION; SILICA;

FORMING GAS ANNEAL (FGA);

DEGRADATION;

EID: 0037974505     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570506     Document Type: Article

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