Fogging effect consideration in mask process at 50 KeV E-beam systems

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 2, 2002, Pages 786-791

  Yang, Seung Hune ^a   Choi, Yo Han ^a   Park, Jong Rak ^a   Kim, Yong Hoon ^a   Choi, Sung Woon ^a   Yoon, Hee Sun ^a   Sohn, Jung Min ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Fogging effect; Gaussian beam; Mean to target; Proximity effect correction; Variable shaped beam

Indexed keywords

ELECTRON BEAMS; ERROR CORRECTION; LIGHT MODULATION;

PROXIMITY EFFECT CORRECTION (PEC);

MASKS;

EID: 0037965921     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.468100     Document Type: Conference Paper

References (9)

1. Seung-Hune Yang, et al., "Proximity Effect Correction Optimization Considering Fogging and Loading Effects Compensation", Proc. SPIE, Vol. 4689, pp. 977-984, 2002.
2. Munehiro Ogasawara, Naoharu Shimomura, et al., "Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system", J. of Vac. Sci. 17(6), pp. 2936-2939, 1999.
3. Naoharu Simomura, Munehiro Ogasawara, et al., "Reduction of fogging effect caused by scattered electrons in an electron beam system", Proc. SPIE, Vol. 3748, pp. 408-415.
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5. Naoki Takahashi, Masayoshi, et al., "Performance of JBX-9000MV with negative tone resist for 130nm reticle", BACUS, pp.22-33, 2000.
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7. Takayuki Abe, "Reticle fabrication by high acceleration voltage electron beam: Representative figure method for proximity effect correction [VI]" J. of Vac. Sci., 14(4), pp. 2474-2484, 1996.
8. Masao Sugiyama, Shinji Kubo, et al., "Proximity effect correction for reticle fabrication", Proc. SPIE, Vol. 4066, pp. 180-187, 2000.
9. Chris A. Mack, "Electron beam lithography simulation for mask making, Part VI: Comparison of 10 and 50 KeV GHOST proximity effect correction" Proc. SPIE, Vol. 4409, pp. 194-203, 2000.