A study of loading effect during electron-beam exposure and etching process in photomask fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 6981-6984

  Choi, Ji Hyeon ^a   Kim, Byung Gook ^a   Jeon, Chan Uk ^a   Cho, Sung Yong ^a   Choi, Seong Woon ^a   Sohn, Jung Min ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CD variation; Dry etch; Extra dose; Pattern density; Rescattering

Indexed keywords

DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; MASKS; PHOTOLITHOGRAPHY;

CRITICAL DIMENSION (CD); OPTICAL PROXIMITY CORRECTION (OPC);

NANOTECHNOLOGY;

EID: 0033319954     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6981     Document Type: Article

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