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Fundamental device design considerations in the development of disruptive nanoelectronics
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Guest editorial: Special section on issues related to semiconductor manufacturing at technology nodes below 70 nm
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R. Singh, R. R. Doering, H. Koike, K. Kim, and M. Heyns, "Guest editorial: special section on issues related to semiconductor manufacturing at technology nodes below 70 nm," IEEE Trans. Semiconduct Manufact., vol. 15, pp. 133-136, 2002.
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Role of rapid thermal processing in the development of disruptive and nondisruptive technologies for semiconductor manufacturing in the 21st century
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R. Singh, M. Fakhruddin, and K. F. Poole, "Role of rapid thermal processing in the development of disruptive and nondisruptive technologies for semiconductor manufacturing in the 21st century," in Proc. RTP 2001, submitted for publication.
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Technology options for developing manufacturable nonsilicon nanoelectronics
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Nis, Yugoslavia
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R. Singh, K. F. Poole, A. Vellanki, and P. Alluri, "Technology options for developing manufacturable nonsilicon nanoelectronics," in Proc. 2002, 23rd Int. Conf. Microelectronics, Nis, Yugoslavia, 2002, pp. 83-90.
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Rapid isothermal processing
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Incorporation of a rapid isothermal processor in a vacuum system
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F. Radpour, S. Anandakugan, P. Chou, and R. Singh, "Incorporation of a rapid isothermal processor in a vacuum system," J. Vac. Sci. and Tech., B, vol. 6, pp. 95-96, 1988.
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Solid phase epitaxial growth of II-A fluorides on semiconductors by in-situ rapid isothermal processing
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R. Singh, A. Kumar, R. P. S. Thakur, P. Chou, J. Narayan, A. R. Srivatsa, A. J. Nelson, and H. S. Ullal, "Solid phase epitaxial growth of II-A fluorides on semiconductors by in-situ rapid isothermal processing," J. Electronic Mater., vol. 19, pp. 481-486, 1990.
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25
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Role of in-situ rapid isothermal processing in the advanced metallizations
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R. Singh and R. P. S. Thakur, "Role of in-situ rapid isothermal processing in the advanced metallizations," J. Inst. Electron. Telecommun. Eng., vol. 37, pp. 219-223, 1991.
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Role of in-situ rapid isothermal processing in advanced III-V technology
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R. P. S. Thakur, R. Singh, A. J. Nelson, and A. W. Swartzlander, "Role of in-situ rapid isothermal processing in advanced III-V technology," J. Appl. Phys., vol. 70, pp. 3857-3861, 1991.
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Limits of integrated circuits manufacturing
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Role of ultra thin silicon oxide interfacial layer in high performance high dielectric constant gate dielectrics
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Paris, Apr. 27-May 2
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R. Singh, M. Fakhruddin, K. F. Poole, S. V. Kondapi, A. Gupta, J. Narayan, and S. Kar, "Role of ultra thin silicon oxide interfacial layer in high performance high dielectric constant gate dielectrics," in 7th Int. Symp. Silicon Nitride and Silicon Dioxide Thin Insulating Films, 203rd ECS Meeting, Paris, Apr. 27-May 2 2003.
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31
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0038077714
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2 thin films on 〈100〉 Si substrates as a gate dielectric material: Processing and characterization
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Salt Lake City, UT, Oct. 20-25, to be published
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2 thin films on 〈100〉 Si substrates as a gate dielectric material: processing and characterization," in Proc. First Int. Symp. High Dielectric Constant Materials: Material Science, Processing, Manufacturing and Reliability Issues, 202nd ECS Meeting. Salt Lake City, UT, Oct. 20-25, 2002, to be published.
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