Fundamental nature of ion-solid interactions in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 1-6

  Weber, W J ^a   Gao, F ^a   Jiang, W ^a   Zhang, Y ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Amorphization; Computer simulations; Defects; Silicon carbide; Thermal recovery

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; DEFECTS; DOSIMETRY; ION BEAMS; MOLECULAR DYNAMICS;

ION-SOLID INTERACTIONS;

SILICON CARBIDE;

EID: 0037906161     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00680-3     Document Type: Conference Paper

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