Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 7, 2001, Pages 1352-1355

  Rodriguez Tellez, J ^a   Fernandez, T ^b   Mediavilla, A ^b   Tazon, A ^b  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

^b UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

Dynamic IV characteristics; Frequency dispersion; GaAs MESFET; Thermal effects

Indexed keywords

FREQUENCY DISPERSION;

CURRENT VOLTAGE CHARACTERISTICS; DELAY CIRCUITS; ELECTRIC FIELD EFFECTS; ELECTRIC IMPEDANCE; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

MESFET DEVICES;

EID: 0035394223     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.932259     Document Type: Article

References (8)

1. J. Rodriguez-Tellez, B. P. Stothard, and M. Al-Daas, "Static, pulsed and frequency-dependent IV characteristics of GaAs FETs," Proc. Inst. Elect. Eng., pt. G, vol. 143, pp. 129-133, June 1996.
2. - "Frequency and temperature dependency of output conductance of GaAs FETs," Microwave J., vol. 38, no. 8, pp. 88-94, Aug. 1995.
3. J. M. Golio, M. G. Miller, G. N. Maracas, and D. A. Johnson, "Frequency- dependent electrical characteristics of GaAs MESFETs," IEEE Trans. Electron Devices, vol. 37, pp. 1217-1227, May 1990.
4. T. Fernandez, Y. Newport, J. M. Zamarillo, A. Mediavilla, and A. Tazon, "High-speed automated pulsed IV measurement system," in 23rd European Microwave Conf., Madrid, Spain, Sept. 1993, pp. 494-496.
5. J. Rodriguez-Tellez, S. Laredo, and R.W. Clarke, "Self-heating in GaAs FETs-A problem?," Microwave J., vol. 37, no. 9, pp. 76-92, Sept. 1994.
6. J. A. Higgins, "Thermal properties of power HBTs," IEEE Trans. Electron Devices, vol. 40, pp. 2171-2177, Dec. 1993.
7. J. P. Teyssier, P. Bouysse, Z. Ouarch, D. Barataud, T. Peyretaillade, and R. Quere, "40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 2043-2052, Dec. 1998.
8. A. E. Parker and J. B. Scott, "Method for determining correct timing for pulsed I/V measurement of GaAs FETs," Electron. Lett., vol. 31, pp. 1697-1698, Sept. 1995.