SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 3 B, 2001, Pages 2029-2032

GaAs-based single electron transistors and logic inverters utilizing schottky wrap-gate controlled quantum wires and dots

Author keywords

Gaas; Quantum dot; Quantum wire; Schottky wrap gate (WPG); Single electron logic inverter; Single electron transistor (SET); Transfer gain

Indexed keywords

ELECTRIC LOADS; ELECTRIC POTENTIAL; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

SCHOTTKY WRAP-GATE (WPG); SINGLE ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0035267486 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2029 Document Type: Article

Times cited : (7)

References (11)

1
- 34249926288
- L. P. Kouwenhoven, N. C. van der Vaart, A. T. Johnson, W. Kool, C. J. P. M. Harmans, J. G. Williamson, A. A. M. Staring and C. T. Foxon: Z. Phys. B 85 (1991) 367.
- (1991) Z. Phys. B , vol.85 , pp. 367
- Kouwenhoven, L.P.¹ Van Der Vaart, N.C.² Johnson, A.T.³ Kool, W.⁴ Harmans, C.J.P.M.⁵ Williamson, J.G.⁶ Staring, A.A.M.⁷ Foxon, C.T.⁸

2
- 0346332115
- S. Tarucha, D. G. Austing, T. Honda, R. J. van der Hage and L. P. Kouwenhoven: Phys. Rev. Lett. 77 (1996) 3613.
- (1996) Phys. Rev. Lett. , vol.77 , pp. 3613
- Tarucha, S.¹ Austing, D.G.² Honda, T.³ Van Der Hage, R.J.⁴ Kouwenhoven, L.P.⁵

3
- 0001244663
- Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase: Appl. Phys. Lett. 76 (2000) 3121.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3121
- Ono, Y.¹ Takahashi, Y.² Yamazaki, K.³ Nagase, M.⁴ Namatsu, H.⁵ Kurihara, K.⁶ Murase, K.⁷

4
- 0031703349
- February 5-7, Tech. Dig.
- K. Yano, T. Ishii, T. Sano, T. Mine, F. Murai, T. Kure and K. Seki: presented at Int. Solid-State Circuits Conf. (ISSCC), February 5-7, 1998, Tech. Dig. p. 344.
- (1998) Presented at Int. Solid-State Circuits Conf. (ISSCC) , pp. 344
- Yano, K.¹ Ishii, T.² Sano, T.³ Mine, T.⁴ Murai, F.⁵ Kure, T.⁶ Seki, K.⁷

5
- 3242715603
- S. Kasai, K. Jinushi, H.Tomozawa and H. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) 1678.
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1678
- Kasai, S.¹ Jinushi, K.² Tomozawa, H.³ Hasegawa, H.⁴

6
- 0032607228
- Y. Satoh, H. Okada, K. Jinushi, H. Fujikura and H. Hasegawa: Jpn. J. Appl. Phys. 38 (1999) 410.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 410
- Satoh, Y.¹ Okada, H.² Jinushi, K.³ Fujikura, H.⁴ Hasegawa, H.⁵

7
- 0033661277
- June 19-21, Denver, Conf. Dig.
- S. Kasai and H. Hasegawa: presented at 58th Device Research Conference (DRC), June 19-21, 2000, Denver, Conf. Dig. p. 155.
- (2000) 58th Device Research Conference (DRC) , pp. 155
- Kasai, S.¹ Hasegawa, H.²

8
- 0004734499
- S. Kasai, Y. Satoh and H. Hasegawa: Inst. Phys. Conf. Ser. 166 (2000) 219.
- (2000) Inst. Phys. Conf. Ser. , vol.166 , pp. 219
- Kasai, S.¹ Satoh, Y.² Hasegawa, H.³

9
- 21544465440
- J. R. Tucker: J. Appl. Phys. 72 (1992) 4399.
- (1992) J. Appl. Phys. , vol.72 , pp. 4399
- Tucker, J.R.¹

10
- 33646955915
- September 17-22, 2000, Osaka, Japan, to be published in the Proc. ICPS 25 Springer Verlag, Jan.
- S. Kasai and H. Hasegawa: presented at 25th Int. Conf. On the Physics of Semiconductors (ICPS 25), September 17-22, 2000, Osaka, Japan, to be published in the Proc. ICPS 25 (Springer Verlag, Jan. 2001).
- (2001) 25th Int. Conf. on the Physics of Semiconductors (ICPS 25)
- Kasai, S.¹ Hasegawa, H.²

11
- 0032613823
- F. Nakajima, K. Kumakura, J. Motohisa and T. Fukui: Jpn. J. Appl. Phys. 38 (1999) 415.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 415
- Nakajima, F.¹ Kumakura, K.² Motohisa, J.³ Fukui, T.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.