Analysis of nonlinear behavior of power HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 7, 2002, Pages 1714-1722

  Kim, Woonyun ^a,b,c   Kang, Sanghoon ^b   Lee, Kyungho ^b   Chung, Minchul ^b   Kang, Jongchan ^b   Kim, Bumman ^a,b,d  

^a IEEE   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d California Institute of Technology   (United States)

Author keywords

Heterojunction bipolar transistors; Intermodulation distortion; Nonlinearity

Indexed keywords

INTERMODULATION DISTORTIONS;

CONTROL NONLINEARITIES; INTERMODULATION; MATHEMATICAL MODELS; SECOND HARMONIC GENERATION; SIGNAL DISTORTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036647115     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.800396     Document Type: Article

References (18)

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7. A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications
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13. The effects of Cbc on the linearity of AlGaAs/GaAs power HBT
14. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors
15. Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs