A 0.18-μm RF SiGe BiCMOS technology with collector-Epi-free double-poly self-aligned HBTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 669-675

  Sato, Fumihiko ^a   Hashimoto, Takasuke ^a   Fujii, Hiroki ^a   Yoshida, Hiroshi ^a   Suzuki, Hisamitsu ^a   Yamazaki, Tohru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Leakage current; Self alignment; SiGe BiCMOS; SiGe HBTs

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; MASKS; MICROELECTRONIC PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; THERMAL CONDUCTIVITY;

COLLECTOR-EPI-FREE TRANSISTORS; DOUBLE-POLY SELF ALIGNED TRANSISTORS; DRAIN ACTIVATION; GATE ACTIVATION; SILICON GERMANIUM TRANSISTORS; SOURCE ACTIVATION;

CMOS INTEGRATED CIRCUITS;

EID: 0037898971     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810464     Document Type: Article

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