Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 20, 2003, Pages

  Bachelier, G ^a   Mlayah, A ^a   Cazayous, M ^a   Groenen, J ^a   Zwick, A ^a   Carrere H ^b   Bedel Pereira, E ^b   Arnoult, A ^b   Rocher, A ^c   Ponchet, A ^c  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b LAAS CNRS   (France)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; NITROGEN;

ACOUSTICS; ARTICLE; CALCULATION; DENSITY; ELECTRONICS; LIGHT SCATTERING; OSCILLATION; QUANTUM MECHANICS; RAMAN SPECTROMETRY; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037825919     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.205325     Document Type: Article

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