Vertical hot-wall type CVD for SiC growth

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Takahashi, Kunimasa ^a   Uchida, Masao ^a   Kitabatake, Makoto ^a   Uenoyama, Takeshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL REACTORS; HIGH TEMPERATURE PROPERTIES; IMPURITIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; VAPOR PHASE EPITAXY;

VERTICAL HOT-WALL CHEMICAL VAPOR DEPOSITION;

SILICON CARBIDE;

EID: 12944260704     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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