MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 231-234

  Ghetti, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Computational modeling; Electron emission; Hot carriers; Integrated circuit modeling; Monte Carlo methods; MOSFET circuits; Potential well; Scattering; Silicon; Voltage

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; MOSFET DEVICES; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON;

CARRIER INDUCED; COMPUTATIONAL MODEL; HOT-ELECTRON TRANSPORT; IMAGE FORCE POTENTIAL; INTEGRATED CIRCUIT MODELING; MONTE CARLO DEVICE SIMULATIONS; MOSFET CIRCUITS; POTENTIAL WELLS;

MONTE CARLO METHODS;

EID: 0038720777     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034559     Document Type: Conference Paper

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