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Volumn 47, Issue 7 SPEC., 2003, Pages 1227-1231

Ag metallization with high electromigration resistance for ULSI

Author keywords

Ag; Electromigration; Etching; Metallization; Patterning

Indexed keywords

ADHESION; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; ELECTROMIGRATION; ETCHING; METALLIZING; SILVER;

EID: 0037741838     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00036-4     Document Type: Conference Paper
Times cited : (14)

References (14)
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    • Venkatesan S et al. A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization. Techn Digest Int Electron Devices Meeting, 31-2, Washington DC, USA, 1997.
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    • Venkatesan, S.1
  • 2
    • 84886448151 scopus 로고    scopus 로고
    • Full copper wiring in a sub-0.25 μm CMOS ULSI technology
    • Washington DC, USA
    • Edelstein D et al. Full copper wiring in a sub-0.25 μm CMOS ULSI technology. Techn Digest Int Electron Devices Meeting, 31-3, Washington DC, USA, 1997.
    • (1997) Techn Digest Int Electron Devices Meeting , vol.31 , Issue.3
    • Edelstein, D.1
  • 3
    • 0005932422 scopus 로고    scopus 로고
    • Electromigration resistance of copper interconnects
    • Save D.et al. Electromigration resistance of copper interconnects. Microelectron. Eng. 33:1997;75-84.
    • (1997) Microelectron. Eng. , vol.33 , pp. 75-84
    • Save, D.1
  • 6
    • 0000179978 scopus 로고    scopus 로고
    • Scaling properties and electromigration resistance of sputtered Ag metallization lines
    • Hauder M., Gstöttner J., Hansch W., Schmitt-Landsiedel D. Scaling properties and electromigration resistance of sputtered Ag metallization lines. Appl. Phys. Lett. 78(6):2001.
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.6
    • Hauder, M.1    Gstöttner, J.2    Hansch, W.3    Schmitt-Landsiedel, D.4
  • 7
    • 0022874938 scopus 로고
    • A new electromigration testing technique for rapid statistical evaluation of interconnect technology
    • Thompson C.V., Cho J. A new electromigration testing technique for rapid statistical evaluation of interconnect technology. IEEE Electron Dev. Lett. 7(12):1986.
    • (1986) IEEE Electron Dev. Lett. , vol.7 , Issue.12
    • Thompson, C.V.1    Cho, J.2
  • 8
    • 0036132968 scopus 로고    scopus 로고
    • Electromigration resistance of sputtered silver lines using different patterning techniques
    • Hauder M., Hansch W., Gstöttner J., Schmitt-Landsiedel D. Electromigration resistance of sputtered silver lines using different patterning techniques. Microelectron. Eng. 60:2002;51-57.
    • (2002) Microelectron. Eng. , vol.60 , pp. 51-57
    • Hauder, M.1    Hansch, W.2    Gstöttner, J.3    Schmitt-Landsiedel, D.4
  • 11
    • 0037197292 scopus 로고    scopus 로고
    • Void formation and electromigration in sputtered Ag lines with different encapsulations
    • Hauder M., Gstöttner J., Hansch W., Schmitt-Landsiedel D. Void formation and electromigration in sputtered Ag lines with different encapsulations. Sensors Actuat A. 99:2002;137-143.
    • (2002) Sensors Actuat A , vol.99 , pp. 137-143
    • Hauder, M.1    Gstöttner, J.2    Hansch, W.3    Schmitt-Landsiedel, D.4
  • 12
    • 0038657073 scopus 로고    scopus 로고
    • Sub-micron silver damascene structures
    • Hauder M.et al. Sub-micron silver damascene structures. Microelectron Eng. 2002;. 73-9.
    • (2002) Microelectron Eng , pp. 73-79
    • Hauder, M.1
  • 13
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    • Microstructure and electromigration in copper damascene lines
    • 22-25 March, San Diego, USA, Interconnects II, 4B.1
    • Arnaud L, Tartavel G, Berger T, Mariolle D, Gobil Y, Touet I. Microstructure and electromigration in copper damascene lines. In: IEEE Int Reliab Phys Symp, 22-25 March 1999, San Diego, USA, Interconnects II, 4B.1.
    • (1999) IEEE Int Reliab Phys Symp
    • Arnaud, L.1    Tartavel, G.2    Berger, T.3    Mariolle, D.4    Gobil, Y.5    Touet, I.6
  • 14
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    • Morphology and electromigration lifetime of copper lines with different barriers
    • Schulz S.E.et al. Morphology and electromigration lifetime of copper lines with different barriers. Proc. ULSI XIII, Mater. Res. Soc. 1998;427-435.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.