Scaling properties and electromigration resistance of sputtered Ag metallization lines

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 838-840

  Hauder, M ^a   Gstottner J ^a   Hansch, W ^a   Schmitt Landsiedel, D ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000179978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1345801     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association (1999).
2. S. Venkatesan, A. V. Gelatos, V. Misra, B. Smith, R. Islam, J. Cope, B. Wilson, D. Tuttle, R. Cardwell, S. Anderson, M. Angyal, R. Bajaj, C. Capasso, P. Crabtree, S. Das, J. Farkas, S. Filipiak, B. Fiordalice, M. Freeman, P. V. Gilbert, M. Herrick, A. Jain, H. Kawasaki, C. King, J. Klein, T. Lii, K. Reid, T. Saaranen, C. Simpson, T. Sparks, P. Tsui, R. Venkatraman, D. Watts, E. J. Weitzman, R. Woodruff, I. Yang, N. Bhat, G. Hamilton, and Y. Yu, Tech. Dig. Int. Electron Devices Meet. 31-2, 769 (1997).
3. D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, and J. Slattery, Tech. Dig. Int. Electron Devices Meet. 31-3, 773 (1997).
4. R. Manepalli, F. Stepniak, S. A. Bidstrup-Allen, and P. Kohl, IEEE Trans. Adv. Packag. 22, 1 (1999).
5. T. L. Alford, D. Adams, T. Laursen, and B. M. Ullrich, Appl. Phys. Lett. 68, 3251 (1996).
6. Y. Wang and T. L. Alford, Appl. Phys. Lett. 74, 1 (1999).
7. T. L. Alford and J. W. Mayer, Book of Abstracts, Materials for advanced Metallization (Stresa, Italy 2000).
8. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998).
9. C. V. Thompson and J. Cho, IEEE Electron Device Lett. 7, 12 (1986).
10. T. J. Coutts, Electrical Conduction in Thin Metal Films (Elsevier Scientific, New York, 1974), pp. 149-184.
11. S. B. Soffer, J. Appl. Phys. 38, 1710 (1967).
12. F. W. Reynolds and G. R. Stillwell, Phys. Rev. 88, 418 (1952).
13. G. Schwalbe, J. Baumann, C. Kaufmann, T. Gessner, P. Gilman, and H. Koenigsmann, Book of Abstracts, Materials for Advanced Metallization (Stresa, Italy, 2000).
14. A. R. Srivatsa, C. L. Ygartua, S. Weinzierl, W. Johnson, and T. Kaack, Solid State Technol. 8, 55 (2000).
15. J. R. Black, Proc. IEEE 57, 9 (1969).
16. R. G. Filippi, G. A. Biery, and R. A. Wachnik, J. Appl. Phys. 78, 3756 (1995).
17. L. Arnaud, G. Tartavel, T. Berger, D. Mariolle, Y. Gobil, and I. Touet, IEEE International Reliability Physics Symposium, 22-25, March, San Diego, Interconnects II (1999), p. 4B.1.