A proposal of corrugated-channel transistor (CCT) with vertically-formed channels for area-conscious applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2067-2072

  Furukawa, Tomoyasu ^a   Yamashita, Hiroki ^a,b   Sunami, Hideo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Corrugate channel transistor; Drivability; Gate oxide thinning; Multi beam; Orientation dependent etching; Three dimensional structure; TMAH; 110 surface

Indexed keywords

AMMONIUM COMPOUNDS; ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SOLUTIONS; SURFACE ROUGHNESS;

CORRUGATED CHANNEL TRANSISTOR; ORIENTATION DEPENDENT ETCHING; TETRAMETHYL AMMONIUM HYDROXIDE; THREE DIMENSIONAL TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0037672086     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2067     Document Type: Article

References (17)

1. T. K. Mok and C. A. T. Salama: Solid-State Electron. 19 (1976) 159.
2. H. Sunami: Japanese Patent No. 1344386.
3. H. Sunami, T. Kure, N. Hashimoto, T. Toyabe and S. Asai: IEEE Electron Device Lett. EDL-4 (1983) 90.
4. H.-S. P. Wong, David, J. Frank, and P. M. Solomon: Int. Electron Device Meet. Tech. Dig. (1998) p. 407.
5. J-H. Lee, G. Taraschi, A. Wei, T. A. Lango, E. A. Fitzgerald and D. A. Antoniadis: Int. Electron Device Meet. Tech. Dig. (1999) p. 71.
6. M. Ieong, E. C. Jones, T. Kanarsky, Z. Ren, O. Dokumaci, R. A. Roy, L. Shi, T. Furukawa, Y. Taur, R. J. Miller and H-S. P. Wong: Int. Electron Device Meet. Tech. Dig. (2001) p. 441.
7. D. Hisamoto, W-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Koo, E. Anderson, T.-J. King, J. Bokor and C. Hu: Int. Electron Device Meet. Tech. Dig. (1998) p. 1032.
8. X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Cang. J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor and C. Hu: Int. Electron Device Meet. Tech. Dig. (1999) p. 67.
9. D. Hisamoto. W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Koo, E. Anderson, T.-J. King, J. Bokor and C. Hu: IEEE Trans. Electron Devices 47 (2000) 2320.
10. J. Kedzierski, D. M. Fried, E. J. Nowak, T. Kanarsky, J. H. Rankin, H. Hanafi, W. Natzle, D. Boyd, Y. Zhang, R. A. Roy, J. Newbury, C. Yu. Q. Yang, P. Saunders, C. P. Willets, A. Johnson, S. P. Cole, H. E. Young, N. Carpenter and D. Rakowski: Int. Electron Device Meet. Tech. Dig. (2001) p. 437.
11. Y-K. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T-J. King, J. Bokor and C. Hu: Int. Electron Device Meet. Tech. Dig. (2001) p. 437.
12. H. Sunami, T. Furukawa and T. Masuda: Proc. Pacific Rim Workshop on Transducers and Micro/nano Technologies, 2002, p. 22.
13. L. O. Wilson: J. Electrochem. Soc. 129 (1982) 831.
14. R. B. Marcus and T. T. Sheng: J. Electrochem. Soc. 129 (1982) 1279.
15. K. Hieda, F. Horiguchi, H. Watanabe, K. Sunouchi, I. Inoue and T. Hamamoto: Int. Electron Device Meet. Tech. Dig. (1987) p. 736.
16. D. Hisamoto, T. Kaga and E. Takeda: IEEE Trans. Electron Devices. 38 (1991) 1419.
17. T. Sato, Y. Takeishi and H. Hara: Phys. Rev. B (1971) 1950.