Modification of GaAs and copper surface by the formation of SiO 2 aerogel film as an interlayer dielectric

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 98-105

  Park, Sung Woo ^a   Jung, Sang Bae ^a   Kang, Min Gu ^a   Park, Hyung Ho ^a   Kim, Hae Cheon ^b  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Copper; GaAs; SiO 2 aerogel; Sulfur passivation; XPS

Indexed keywords

AEROGELS; COPPER; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; PERMITTIVITY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

AEROGEL FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037670147     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00488-4     Document Type: Conference Paper

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