Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 328-333

  Kang, Min Gu ^a   Park, Hyung Ho ^a   Suh, Kyung Soo ^b   Lee, Jong Lam ^c  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Controlled atmosphere; GaAs; Sulfidation; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; CHEMICAL CLEANING; COMPOSITION EFFECTS; OXIDATION; PASSIVATION; PHOTOLUMINESCENCE; PROTECTIVE ATMOSPHERES; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR COMPOUNDS; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SULFIDATION;

SEMICONDUCTING FILMS;

EID: 0030408940     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08970-5     Document Type: Article

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