Transition from random to island growth mode during Si(100)-(2×1) dry oxidation and its description with autocatalytic reaction model

Applied Surface Science

Volumn 162, Issue , 2000, Pages 293-298

  Suemitsu, M ^a   Enta, Y ^a   Miyanishi, Y ^a   Takegawa, Y ^a   Miyamoto, N ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CATALYSIS; COALESCENCE; CRYSTAL ORIENTATION; FILM GROWTH; MATHEMATICAL MODELS; MONOLAYERS; NUCLEATION; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SURFACE STRUCTURE; ULTRAVIOLET SPECTROSCOPY;

AUTOCATALYTIC REACTION MODEL; DRY OXIDATION; ISLAND GROWTH; LANGMUIR-HINSHELWOOD ADSORPTION;

SILICON WAFERS;

EID: 0034246545     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00206-3     Document Type: Article

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