Effect of submonolayer carbon on nanoscale Ge dot growth on Si(0 0 1) substrates

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 399-404

  Wakayama, Yutaka ^a,c   Gerth, Gerhard ^a   Werner, Peter ^a   Sokolov, Leonid V ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic force microscopy; Carbon; Germanium; Molecular beam epitaxy; Self assembly; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; WETTING;

SUBMONOLAYERS;

SEMICONDUCTING SILICON;

EID: 0035500869     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01245-6     Document Type: Conference Paper

References (15)