Si/SiGe quantum cascade structures emitting in the 10 μm range

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 30-35

  Dehlinger, G ^a   Diehl, L ^a   Gennser, U ^a   Sigg, H ^a   Muller E ^a   Stutz, S ^a   Faist, J ^b   Stangl, J ^c   Roch, T ^c   Bauer, G ^c   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b Universite de Neuchatel Institut de Physique   (Switzerland)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

MBE; Quantum cascade structure; Silicon germanium

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

QUANTUM CASCADE (QC) STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037074870     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00786-3     Document Type: Conference Paper

References (16)

1. SPIE Conference on Silicon-based Optoelectronics