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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 286-290

Characteristics of Ag etching using inductively coupled Cl2-based plasmas

(7) Lee, Young Joon a Park, Sang Duk a Song, Byoung Kwan a Kim, Sang Gab b Choe, Hee Hwan b Hong, Moon Pyo b Yeom, Geun Young a

a Sungkyunkwan University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

Cl2 based plasma; Etch product; Etching; Removal rate; Silver (Ag)

Indexed keywords

CHLORINE; COMPOSITION EFFECTS; DEPOSITION; ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; PHYSICAL PROPERTIES; PRESSURE EFFECTS; REMOVAL; THIN FILMS; VAPOR PRESSURE;

ETCH PRODUCTS; GAS MIXTURES; PHOTORESIST STRIPPER; REMOVAL RATES;

SILVER;

EID: 0037667804 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.42.286 Document Type: Article

Times cited : (6)

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