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Volumn 37, Issue 12 B, 1998, Pages 6916-6921
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Effects of post annealing and oxidation processes on the removal of damage generated during the shallow trench etch process
a a b c a |
Author keywords
Annealing; Damage; Inductively coupled plasma; Oxidation; Silicon trench etching; STI
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Indexed keywords
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EID: 0013009613
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.6916 Document Type: Article |
Times cited : (6)
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References (10)
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