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Volumn 37, Issue 12 B, 1998, Pages 6916-6921

Effects of post annealing and oxidation processes on the removal of damage generated during the shallow trench etch process

Author keywords

Annealing; Damage; Inductively coupled plasma; Oxidation; Silicon trench etching; STI

Indexed keywords


EID: 0013009613     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6916     Document Type: Article
Times cited : (6)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.