SIMS and RBS study of thermally annealed Pd/β-SiC interfaces

Applied Surface Science

Volumn 202, Issue 1-2, 2002, Pages 73-79

  Roy, S ^a   Basu, S ^a   Jacob, C ^a   Tyagi, A K ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Pd SiC interface; RBS; SIMS; Thermal annealing

Indexed keywords

DEGRADATION; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); PALLADIUM; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

DIFFUSION BARRIERS;

SURFACE PROPERTIES;

EID: 0037114359     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00896-6     Document Type: Article

References (15)

1. Bertilsson K., Nilsson H.-E. Diamond Relat. Mater. 11 2002 1254.
2. Carter C.H. Jr., Tsvetkov V.F., Glass R.C., Henshall D., Brady M., Müller St.G., Kordina O., Irvine K., Edmond J.A., Kong H.-S., Singh R., Allen S.T., Palmour J.W. Mater. Sci. Eng. B 61/62 1999 1.
3. Savage S., Spetz A.L. Compound Semiconduct. 6 3 2000 76.
4. Spetz A.L., Baranzahi A., Tobias P., Lundström I. Phys. Stat. Sol. A 162 1997 493.
5. Constantinidis G., Pecz B., Tsagaraki K., Kayambaki M., Michelakis K. Mater. Sci. Eng. B 61/62 1999 406.
6. Papanicolaou N.A., Christou A., Gipe M.L. J. Appl. Phys. 65 9 1989 3526.
7. Kim C.K., Lee J.H., Choi S.M., Noh I.H., Kim H.R., Cho N.I., Hong C., Jang G.E. Sens. Actuators B 77 2001 455.
8. Chen L.Y., Hunter G.W., Neudeck P.G., Bansal G. J. Vacuum Sci. Technol. A 15 3 1997 1228.
9. Saarilahti J., Rauhala E. Nucl. Instrum. Methods B64 1992 734.
10. J.M. Walls (Ed.), Methods of Surface Analysis, Cambridge University Press, Cambridge, 1989, Chapter 7, p. 227.
11. Hiraki A., Lugujjo E. J. Vacuum Sci. Technol. 9 1972 155.
12. Atkinson A. Rev. Mod. Phys. 57 1985 437.
13. Kobayashi H., Kawa H., Yuasa T., Nakato Y., Yoneda K. Appl. Surf. Sci. 113/114 1997 590.
14. Pai C.S., Hanson C.M., Lau S.S. J. Appl. Phys. 57 2 1985 618.
15. Chen Y., Matsumoto K., Nishio Y., Shirafuji T., Nishino S. Mater. Sci. Eng. B 61/62 1999 579-582.