Electric passivation of interface traps at drain junction space charge region in p-MOS transistors

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1427-1431

  Chen, G ^a   Li, M F ^a   Jin, Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; HYDROGEN; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

JUNCTION SPACE CHARGE (JSC);

MOSFET DEVICES;

EID: 0035456809     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00172-X     Document Type: Article

References (8)

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