Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 77-84

  Sheng, S R ^a   Dion, M ^b   McAlister, S P ^a   Rowell, N L ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b SiGe Semiconductor   (Canada)

Author keywords

A3. Chemical vapor deposition processes; A3. Superlattices; B1. Germanium silicon alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SUPERLATTICE TRANSITION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037610964     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01018-2     Document Type: Article

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