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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 1120-1124

Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

(4) Sheng, S R a Dion, M b McAlister, S P a Rowell, N L a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b SiGe Semiconductor (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; PHOTOLUMINESCENCE; ROUGHNESS MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION MILLING TECHNIQUE; SILICON GERMANIUM COMPOUNDS; STRUCTURAL QUALITY;

EPITAXIAL GROWTH;

EID: 0036565333 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1464840 Document Type: Article

Times cited : (13)

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