Effect of interfacial dopant layer on transport properties of high purity InP

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1960-1962

  Watkins, S P ^a   Cheung, H D ^a   Knight, G ^b   Kelly, G ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037961780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115639     Document Type: Article

References (6)

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3. S. P. Watkins, C. A. Tran, H. D. Cheung, G. Soerensen, R. A. Ares, Y. Lacroix, and M. L. W. Thewalt, J. Electron. Mater. 24, 1583 (1995).
4. K. Rakennus, J. Likonen, J. Näppi, K. Tappura, H. Asonen, and M. Pessa, Proceedings of the 5th International Conference on Indium Phosphide and Related Materials (IEEE, Piscataway, NJ, 1993), p. 107.
5. N. Pan, J. Carter, J. Elliott, H. Hendriks, S. Brierley, and K. C. Hsieh, Appl. Phys. Lett. 63, 3029 (1993).
6. M. L. W. Thewalt (private communication).