First-principles calculation on diffusion of Si adatoms on H/Si(001)-(2×1) surface

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 254-259

  Nara, Jun ^a   Sasaki, Taizo ^a   Ohno, Takahisa ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DIFFUSION IN SOLIDS; HYDROGEN; HYDROGENATION; SEMICONDUCTING SILICON; SURFACE PHENOMENA;

ADATOMS; DIMERS; FIRST PRINCIPLES CALCULATION; SURFACE MIGRATION;

SEMICONDUCTING FILMS;

EID: 17144470356     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00065-8     Document Type: Article

References (9)

1. D.P. Adams S.M. Yalisove D.J. Eaglesham Appl. Phys. Lett. 63 1993 3571
2. M. Copel R.M. Tromp Phys. Rev. Lett. 72 1994 1236
3. A. Sakai T. Tatsumi Appl. Phys. Lett. 64 1994 52
4. J.E. Vasek Z. Zhang C.T. Salling M.G. Lagally Phys. Rev. B 51 1995 17207
5. T. Ogitsu T. Miyazaki M. Fujita M. Okazaki Phys. Rev. Lett. 75 1995 4226
6. D. Vanderbilt Phys. Rev. B 41 1990 7892
7. K. Sinniah M.G. Sherman L.B. Lewis W.H. Weinberg J.T. Yates Jr. K.C. Janda Phys. Rev. Lett. 62 1989 567
8. G. Brocks P.J. Kelly R. Car Phys. Rev. Lett. 66 1991 1729
9. Y.-W. Mo J. Kleiner M.B. Webb M.G. Lagally Phys. Rev. Lett. 66 1991 1998