Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1580-1582

  Choi, Kyoung Jin ^a   Lee, Jong Lam ^a   Yoo, Hyung Mo ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Microwave Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSCONDUCTANCE;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032620343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124760     Document Type: Article

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