Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source

Thin Solid Films

Volumn 426, Issue 1-2, 2003, Pages 1-7

  Chen, Dihu ^a,b,c   Wong, S P ^b   Yang, Shenghong ^a   Mo, D ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Ellipsometry; Ion implantation; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; MICROSTRUCTURE; OPTICAL PROPERTIES; STOICHIOMETRY; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM SYNTHESIS;

SILICON CARBIDE;

EID: 0037463301     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01298-1     Document Type: Article

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