Formation and characterization of SiC-Si heterojunction by carbon implantation with a MEVVA ion source

Diamond and Related Materials

Volumn 5, Issue 3-5, 1996, Pages 556-559

  Yan, H ^a   Kwok, R W M ^a   Wong, S P ^a  

^a NONE

Author keywords

Carbon implantation; MEVVA ion source; SiC layer; SiC Si heterojunction

Indexed keywords

EID: 0012589579     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00411-4     Document Type: Article

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