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Volumn 79, Issue 2, 1996, Pages 637-646

Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000122741     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360806     Document Type: Article
Times cited : (64)

References (35)
  • 14
    • 0346351962 scopus 로고
    • edited by F. Huff, R. J. Krieger, and Y. Takeishi Electrochemical Society, Pennington, NJ
    • A. G. Cullis, R. Serles, H. C. Webber, and N. G. Chew. Semiconductor Silicon 1981, edited by F. Huff, R. J. Krieger, and Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981), p. 518.
    • (1981) Semiconductor Silicon 1981 , pp. 518
    • Cullis, A.G.1    Serles, R.2    Webber, H.C.3    Chew, N.G.4
  • 24
    • 0042796183 scopus 로고
    • American Society for Testing and Materials, Designation F123, Section 10
    • Annual Book of ASTM Standards (American Society for Testing and Materials, 1986), Designation F123, Section 10.
    • (1986) Annual Book of ASTM Standards
  • 32
    • 5244351946 scopus 로고    scopus 로고
    • J. S. Williams, in Ref. 4. p. 133
    • J. S. Williams, in Ref. 4. p. 133.
  • 35
    • 5244310364 scopus 로고    scopus 로고
    • C. W. White, D. M. Zehner, S. U. Campisano, and A. G. Cullis, in Ref. 4, p. 81
    • C. W. White, D. M. Zehner, S. U. Campisano, and A. G. Cullis, in Ref. 4, p. 81.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.