Depth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4724-4726

  Chen, T P ^a   Liu, Y ^a   Tse, M S ^a   Ho, P F ^a   Dong, Gui ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELLIPSOMETRY; ENERGY GAP; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SILICA;

DEPTH PROFILING;

NANOSTRUCTURED MATERIALS;

EID: 0037449285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528286     Document Type: Article

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