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Volumn 226, Issue 1, 2003, Pages 107-116

Desorption/ionization on silicon (DIOS) mass spectrometry: Background and applications

Author keywords

Desorption ionization on silicon (DIOS); High throughput; Matrix less; Silicon

Indexed keywords

PROTEIN; SILICON;

EID: 0037445355     PISSN: 13873806     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1387-3806(02)00973-9     Document Type: Article
Times cited : (168)

References (53)
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    • (1995) The Quantum Dot
    • Turton, R.1
  • 42
    • 0013411823 scopus 로고    scopus 로고
    • The Institution of Electrical Engineers, London
    • D. Bellet, Drying of Porous Silicon, vol. 18, The Institution of Electrical Engineers, London, 1998.
    • (1998) Drying of Porous Silicon , vol.18
    • Bellet, D.1
  • 43
    • 0001929694 scopus 로고    scopus 로고
    • L. Canham (Ed.), INSPEC, The Institution of Electrical Engineers, London
    • A. Halimaoui, in: L. Canham (Ed.), Properties of Porous Silicon, INSPEC, The Institution of Electrical Engineers, London, 1997, p. 12.
    • (1997) Properties of Porous Silicon , pp. 12
    • Halimaoui, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.