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Volumn 666, Issue , 2001, Pages F1141-F1146
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Characterization of the interfacial layer formed during pulsed laser deposition of oxides on Si
a a a a |
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Author keywords
Laser ablation; Medium k dielectrics; Thin films; Yttria
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Indexed keywords
CHARACTERIZATION;
CURRENT VOLTAGE CHARACTERISTICS;
FILM GROWTH;
HIGH RESOLUTION ELECTRON MICROSCOPY;
INTERFACES (MATERIALS);
OXIDES;
PERMITTIVITY;
PULSED LASER DEPOSITION;
SEMICONDUCTING SILICON;
SUBSTRATES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
INTERFACIAL LAYERS;
DIELECTRIC FILMS;
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EID: 0035556503
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: 10.1557/proc-666-f11.4 Document Type: Article |
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Times cited : (1)
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References (19)
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