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Thin Solid Films

Volumn 397, Issue 1-2, 2001, Pages 186-193

Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection

(6) Huang, J S b Deng, X J a Yih, P H a Shofner, T L a Obeng, Y S a Darling, C a

a NOKIA RESEARCH CENTER (United States)

b Agere Systems (United States)

Author keywords

Aluminum; Electromigration; Semiconductors; Silicon nitride

Indexed keywords

CURRENT DENSITY; ELASTIC MODULI; ELECTROMIGRATION; FAILURE ANALYSIS; MICROANALYSIS; SILICON NITRIDE;

CAPPING LAYERS; MULTILEVEL INTERCONNECTS;

DIELECTRIC FILMS;

EID: 0035499788 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01265-2 Document Type: Article

Times cited : (12)

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