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Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2547-2549

Temperature dependence of electrical properties of N2O/O 2/N2O-grown oxides on strained SiGe

(5) Samanta, S K a Chatterjee, S a Bera, L K a Banerjee, H D a Maiti, C K a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONDUCTION MECHANISM; CONSTANT CURRENT; FOWLER-NORDHEIM TUNNELING; FRENKEL-POOLE CONDUCTION; HIGH FREQUENCY; RAPID THERMAL OXIDATION; STRAINED SIGE; TEMPERATURE DEPENDENCE; ULTRA-THIN OXIDE;

ELECTRIC CURRENTS; ELECTRIC FIELDS; SILICON ALLOYS; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY;

ELECTRIC PROPERTIES;

EID: 79955983009 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1469221 Document Type: Article

Times cited : (9)

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