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Volumn 227-230, Issue PART 2, 1998, Pages 1213-1216

Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method

Author keywords

Excimer laser; On current; Poly silicon TFT

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRIC CURRENT CONTROL; EXCIMER LASERS; LASER BEAM EFFECTS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032066063     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00309-3     Document Type: Article
Times cited : (2)

References (9)
  • 1
    • 0000348614 scopus 로고
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    • A.M. Firester, W.R. Roach, R. Stewart, Poly-Si TFT devices and their application to LCDs, Jpn. Display 92 (1992) 557.
    • (1992) Jpn. Display , vol.92 , pp. 557
    • Firester, A.M.1    Roach, W.R.2    Stewart, R.3
  • 5
    • 0020847405 scopus 로고
    • Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon
    • S.D.S. Malhi et al., Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon, Electron. Lett. 19 (1983) 993.
    • (1983) Electron. Lett. , vol.19 , pp. 993
    • Malhi, S.D.S.1
  • 6
    • 0021521891 scopus 로고
    • Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source
    • G.P. Pollack et al., Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source, IEEE Electron Device Lett. 5 (1984) 468.
    • (1984) IEEE Electron Device Lett. , vol.5 , pp. 468
    • Pollack, G.P.1
  • 7
    • 0023851207 scopus 로고
    • Characteristics of offset structure polycrystalline silicon thin-film transistors
    • K. Tanaka, H. Arai, S. Kohda, Characteristics of offset structure polycrystalline silicon thin-film transistors, IEEE Electron Device Lett. 9 (1) (1988) 23.
    • (1988) IEEE Electron Device Lett. , vol.9 , Issue.1 , pp. 23
    • Tanaka, K.1    Arai, H.2    Kohda, S.3
  • 8
    • 0026851363 scopus 로고
    • Characteristics of field induced drain poly-Si TFT's with high ON/OFF current ratio
    • K. Tanaka, K. Nakazawa, S. Suyama, K. Kato, Characteristics of field induced drain poly-Si TFT's with high ON/OFF current ratio, IEEE Trans. Electron Devices ED 39 (4) (1992) 916.
    • (1992) IEEE Trans. Electron Devices ED , vol.39 , Issue.4 , pp. 916
    • Tanaka, K.1    Nakazawa, K.2    Suyama, S.3    Kato, K.4
  • 9
    • 0024753175 scopus 로고
    • XeCl excimer laser annealing used to fabricate poly-Si TFT's
    • T. Sameshima, M. Hara, S. Usui, XeCl excimer laser annealing used to fabricate poly-Si TFT's, Jpn. J. Appl. Phys. 28 (2) (1989) L309.
    • (1989) Jpn. J. Appl. Phys. , vol.28 , Issue.2
    • Sameshima, T.1    Hara, M.2    Usui, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.