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Volumn 227-230, Issue PART 2, 1998, Pages 1213-1216
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Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method
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Author keywords
Excimer laser; On current; Poly silicon TFT
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Indexed keywords
AMORPHOUS SILICON;
CRYSTALLIZATION;
ELECTRIC CURRENT CONTROL;
EXCIMER LASERS;
LASER BEAM EFFECTS;
LEAKAGE CURRENTS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
ON/OFF CURRENT RATIO;
THIN FILM TRANSISTORS;
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EID: 0032066063
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00309-3 Document Type: Article |
Times cited : (2)
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References (9)
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