Charge sheet model of a polysilicon thin-film transistor

Microelectronic Engineering

Volumn 60, Issue 3-4, 2002, Pages 381-393

  Bindra, Simrata ^a   Haldar, Subhasis ^b   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Charge sheet approach; Grain size; Poly Si; Thin film transistor

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CONDUCTANCE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POLYSILICON; SEMICONDUCTOR DOPING;

CHARGE SHEET;

THIN FILM TRANSISTORS;

EID: 0036532412     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00697-9     Document Type: Article

References (17)

1. A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistor
2. A closed-form inversion-type polysilicon thin-film transistor dc/ac model considering the kink effect
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4. A physical based analytical turn-on model of polysilicon thin-film transistor for circuit simulation
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14. Unified model for short-channel poly-Si TFTs
15. Polysilicon thin film transistors with channel length and width comparable to or smaller than the grain size of the thin film