Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 206-211

  Gokden, S ^a   Balkan, N ^b   Ridley, B K ^b  

^a BALIKESIR UNIVERSITY   (Turkey)

^b UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; VELOCITY;

ALUMINUM GALLIUM NITRIDE; HIGH-FIELD DRIFT VELOCITY; NON-DRIFTING HOT PHONONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037392464     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/303     Document Type: Article

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