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Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1135-1140

Diffusion and surface segregation in thin SiGe/Si layers studied by scanning transmission electron microscopy

(3) Walther, T a Humphreys, C J a Robbins, D J b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

Author keywords

Activation energy; Electron microscopy; Segregation; SiGe; Strain enhanced diffusion

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION LENGTH; ENHANCED DIFFUSION; HIGH-ANGLE ANNULAR DARK-FIELD IMAGING; IN-SITU TECHNIQUES; MULTIPLE QUANTUM-WELL STRUCTURES; POLY-CRYSTALLINE BULK; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIGE;

SURFACE SEGREGATION;

EID: 0001260031 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/DDF.143-147.1135 Document Type: Article

Times cited : (24)

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