Energy-filtered transmission electron microscopy of multilayers in semiconductors

Journal of Microscopy

Volumn 194, Issue 1, 1999, Pages 58-70

  Liu, C P ^a   Boothroyd, C B ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

EFTEM; ESI; InAsP; Multilayers; Quantitative analysis; Semiconductors; TiAlN

Indexed keywords

ALUMINUM COMPOUNDS; ATOMS; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; ION BEAMS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL TO NOISE RATIO;

ATOMIC DIMENSION; ATOMIC FRACTIONS; CONTROL ELECTRONICS; DOPANT CONCENTRATIONS; EFTEM; ELECTRONIC AND OPTICAL PROPERTIES; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; ESI; LIMITED RESOLUTION; ULTRATHIN MULTILAYERS;

TITANIUM COMPOUNDS;

ACCURACY; ARTICLE; CALCULATION; ENERGY; MATHEMATICAL ANALYSIS; PRIORITY JOURNAL; SEMICONDUCTOR; SIGNAL NOISE RATIO; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033044253     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1999.00459.x     Document Type: Article

References (14)

1. Berger, A. & Kohl, H. (1993) Optimum imaging parameters for elemental mapping in an energy filtering transmission electron microscope. Optik, 92, 175-193.
2. Crozier, P.A. (1995) Quantitative elemental mapping of materials by energy-filtered imaging. Ultramicroscopy, 58, 157-174.
3. Egerton, R.F. (1997) Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd edn. Plenum Press, New York.
4. Egerton, R.F. & Crozier, P.A. (1997) The effect of lens aberrations on the spatial resolution of an energy-filtered TEM image. Micron, 28, 117-124.
5. Egerton, R.F., Yang, Y.-Y. & Chen, F.Y.Y. (1991) EELS of 'thick' specimens. Ultramicroscopy, 38, 349-352.
6. n superlattices and Si Ge heterostructures I. Experimental results. Ultramicroscopy, 59, 33-45.
7. Kohl, H. & Berger, A. (1995) The resolution limit for elemental mapping in energy-filtering transmission electron microscopy. Ultramicroscopy, 59, 191-194.
8. Kortje, K.-H. (1996) ESI contrast analysis: a new approach for element analysis with energy-filtering transmission electron microscopy (EFTEM). J. Microsc. 184, 175-184.
9. Krivanek, O.L., Kundmann, M.K. & Kimoto, K. (1995) Spatial resolution in EFTEM elemental maps. J. Microsc. 180, 277-287.
10. Liu, C.P. (1998) Characterisation of ultrathin semiconductor layers using transmission electron microscopy. PhD Thesis, University of Cambridge, England.
11. Liu, C.P., Boothroyd, C.B. & Humphreys, C.J. (1998) Energy-filtered transmission electron microscopy of multilayers in semiconductors. Electron Microscopy of Semiconducting Materials and ULSI Devices (ed. by C. Hayzelden, F. M. Ross and C. J. D. Hetherington), pp. 159-164. MRS Symposium Proceedings, Vol 523. MRS, Pittsburgh.
12. Liu, C.P., Dunin-Borkowski, R.E., Boothroyd, C.B., Brown, P.D. & Humphreys, C.J. (1997) Characterization of ultrathin doping layers in semiconductors. Microsc. Microanal. 3, 352-363.
13. Liu, C.P., Preston, A.R., Boothroyd, C.B. & Humphreys, C.J. (1999) Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images. J. Microsc. 194, 171-182.
14. Wang, Z.L. (1996) Energy-filtered high-resolution electron microscopy and composition-sensitive imaging. Microsc. Res. Technique, 33, 279-287.